These capabilities, combined
with the heating chamber's
cold-wall design and
superior heating uniformity,
provide significant advantages
over conventional
furnace processing.
| Recommended
Steady State Temperature
Range: 400-1000° C. |
| Steady-State
Temperature Stability:
± 2° C. |
Temperature
Monitoring Mechanisms:
Extended Range Pyrometer
(ERP), used
throughout the recommended
temperature range, or
a thermocouple, used for
process temperatures below
400° C. |
| Heating
Rate: 1-200° C per second,
user-controllable. |
| Cooling
Rate: Temperature dependent;
max 150° C per second. |
Maximum
Non-uniformity:
±3°C across a 3"
(75mm) wafer at 1000°C.
(This is a one sigma
deviation 100
angstrom oxide.) For
a titanium silicidation
process, no more than
4% increase
in non-uniformity during
the first anneal at
650°C to 700 °C.
. |
| Implant:
As 1E16 50 KeV with implant
uniformity ≤0.3% |
| Lamp Life:
Unconditionally guaranteed
for three years. |
| Steady State
Time: 1-9999 sec. (1-600
sec. recommended) |
| Wafer Sizes
for the HEATPULSE 310:
2", 3" |
Process
Gases: The HEATPULSE system
delivers one non-corrosive
process
gas with manually controlled
flow. Optional MFC, Up
to 4. |
GUI software
Standard , upgrade to
P-CAT
|
| 16 bit Precision
on A/D |
