AG
ASSOCIATES HEATPULSE 310 RAPID
THERMAL PROCESSOR
Features
and Applications
Manually loaded and capable
of processing silicon and
III-V substrates up to 75mm
in diameter, Heatpulse 310
provides solutions to your
process development and monitoring
needs. Equipped with a graphical
user interface to improve
operator productivity, Heatpulse
310 offers recipe management
and system diagnostics.
Major
System Features
Semiconductor grade
quartz process chamber
21 tungsten halogen
lamps in an upper and
lower array
Extended Range Pyrometer:
400°C -1000oC (200°C w/TC)
Graphical User Interface(GUI)
Rebuilt to OEM specs-
will look like new system
These capabilities, combined
with the heating chamber's
cold-wall design and
superior heating uniformity,
provide significant advantages
over conventional
furnace processing.
Key
features include:
Closed-loop temperature
control with pyrometer
or thermocouple temperature
sensing.
Precise time-temperature
profiles tailored to suit
specific process requirements.
Fast heating and cooling
rates unobtainable in
conventional technologies.
Consistent wafer-to-wafer
process cycle repeatability.
Elimination of external
contamination.
Small footprint and
energy efficiency.
PERFORMANCE
SPECIFICATIONS
Recommended
Steady State Temperature
Range: 400-1000° C.
Steady-State
Temperature Stability:
± 2° C.
Temperature
Monitoring Mechanisms:
Extended Range Pyrometer
(ERP), used
throughout the recommended
temperature range, or
a thermocouple, used for
process temperatures below
400° C.
Heating
Rate: 1-200° C per second,
user-controllable.
Cooling
Rate: Temperature dependent;
max 150° C per second.
Maximum
Non-uniformity:
±3°C across a 3"
(75mm) wafer at 1000°C.
(This is a one sigma
deviation 100
angstrom oxide.) For
a titanium silicidation
process, no more than
4% increase
in non-uniformity during
the first anneal at
650°C to 700 °C.
.
Implant:
As 1E16 50 KeV with implant
uniformity ≤0.3%
Lamp Life:
Unconditionally guaranteed
for three years.
Steady State
Time: 1-9999 sec. (1-600
sec. recommended)
Wafer Sizes
for the HEATPULSE 310:
2", 3"
Process
Gases: The HEATPULSE system
delivers one non-corrosive
process
gas with manually controlled
flow. Optional MFC, Up
to 4.
GUI software
Standard , upgrade to
P-CAT
16 bit Precesion
on A/D
Process
Role of RTP
Anneal
Improve concentration
profile of dopants in silicon
substrate after implantation
Oxidation
Form a uniform layer of
silicon dioxide to insulate
a circuit element
Silicidation
Decrease the resistivity
of tungsten silicide or
titanium silicide caps on
polycrystalline device gates
Nitridization
Form a silicon nitride
layer for insulation, protection
against oxidation, or anti-reflective
coatings
BSPG Reflow
Improve the surface characteristics
such as uniformity for boron
phosphorous spin on glass
(BPSG). Also called densification
Ion Activation
Cause implanted ions such
as arsenic and boron to
integrate into the silicon
crystal lattice to improve
surface conductivity
Platinum Sintering
Form a thermionic bond
between platinum and silicon
to increase the current-carrying
capability of a circuit
Salicidation
Self-aligning Silicidation.
Increase the conductivity
of refractory metal silicides
used to connect gate material
to metallic vias. Similar
to Silicidation
Warranty
Engineering Solutiosn LLCs
expressly warrants a warranty
of 12 months Standard with all
heatpulse sales.
Options:
Extended Warranty: 12, and
24 additional months
Research wafer trays available
for either Si or GaAs in 2",
3"
sizes; GaAs Susceptors; and
Slip-Free Rings.
